Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 $\rm ^{o}$C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 $\rm ^{o}$C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.Comment: 4 pages, 6 figure

Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots

We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic control gates, together with an Al-AlOx single-electron transistor, were positioned on the substrate surface, capacitively coupled to the buried dots. The individual double-dot charge states were probed using source-drain bias spectroscopy combined with non-invasive SET charge sensing. The system was measured in linear (VSD = 0) and non-linear (VSD 0) regimes allowing calculations of the relevant capacitances. Simultaneous detection using both SET sensing and source-drain current measurements was demonstrated, providing a valuable combination for the analysis of the system. Evolution of the triple points with applied bias was observed using both charge and current sensing. Coulomb diamonds, showing the interplay between the Coulomb charging effects of the two dots, were measured using simultaneous detection and compared with numerical simulations.Comment: 7 pages, 6 figure

Charge-based silicon quantum computer architectures using controlled single-ion implantation

We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart, one of which is singly ionized. The lowest two energy states of the remaining electron form the logical states. Surface electrodes control the qubit using voltage pulses and dual single electron transistors operating near the quantum limit provide fast readout with spurious signal rejection. A low energy (keV) ion beam is used to implant the phosphorus atoms in high-purity Si. Single atom control during the implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure, while positional accuracy is provided by a nanomachined resist mask. We describe a construction process for implanted single atom and atom cluster devices with all components registered to better than 20 nm, together with electrical characterisation of the readout circuitry. We also discuss universal one- and two-qubit gate operations for this architecture, providing a possible path towards quantum computing in silicon.Comment: 9 pages, 5 figure

Justifying the constitutional regulation of political parties : a framework for analysis

What are the main reasons behind the regulation of political parties by contemporary constitutional practices? This article presents a framework for analysis which identifies types of justifications and actors involved in the process of regulation and their further influence on the outcomes of constitutionalization. The empirical focus is on the revelatory case of Luxembourg, which amended the constitution for the sole reason of giving parties constitutional status. The analysis suggests that the constitutional regulation of political parties depends on their current interests and power status. Additionally, the paper draws attention to the involvement of external actors and nevertheless to the changing nature of contemporary constitutionalism

Party rules, party resources, and the politics of parliamentary democracies: how parties organize in the 21st Century

This article introduces the first findings of the Political Party Database (PPDB) project, a major survey of party organizations in parliamentary and semi-presidential democracies. The project’s first round of data covers 122 parties in 19 countries. In this paper we describe the scope of the database, then investigate what it tells us about contemporary party organization in these countries, focussing on parties’ resources, structures and internal decision-making. We examine organizational patterns by country and party family, and where possible we make temporal comparisons with older datasets. Our analyses suggest a remarkable coexistence of uniformity and diversity. In terms of the major organizational resources on which parties can draw, such as members, staff and finance, the new evidence largely confirms the continuation of trends identified in previous research: i.e., declining membership, but enhanced financial resources and more paid staff. We also find remarkable uniformity regarding the core architecture of party organizations. At the same time, however, we find substantial variation between countries and party families in terms of their internal processes, with particular regard to how internally democratic they are, and in the forms that this democratization takes

Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation

C1 - Journal Articles Referee

Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions

C1 - Journal Articles Referee